Non-volatile semiconductor memory device and process for fabricating the same

ABSTRACT

A non-volatile semiconductor memory device comprising a first conductive semiconductor having steps on a surface thereof, a second conductive semiconductor region formed on an upper portion and a bottom portion of each of the steps and being separated in a direction perpendicular to the main surface of the first conductive semiconductor to function as a source or a drain, a gate dielectric film containing therein charge storage means which is spatially discrete and being formed on the first conductive semiconductor so as to coat at least a sidewall of each of the steps, and a gate electrode formed on the gate dielectric film. Accordingly, there are provided a non-volatile semiconductor memory device which suffers almost no deterioration in the properties and can perform the operation of recording of 2 bits per unit memory device even when the size of the semiconductor memory device in the semiconductor substrate is scaled down, and a process for fabricating the non-volatile semiconductor memory device.

CROSS REFERENCES TO RELATED APPLICATIONS

The present document is based on Japanese Priority Document JP2001-079123, filed in the Japanese Patent Office on Mar. 19, 2001, theentire contents of which being incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a non-volatile semiconductor memorydevice having charge storage means which is two-dimensionally discrete,for example, a charge trap in the nitride film in a metal oxide nitrideoxide semiconductor (MONOS) type device or metal nitride oxidesemiconductor (MNOS) type device, wherein the device records or erasesdata by injecting charges into or taking out charges from the chargestorage means, and a process for fabricating the non-volatilesemiconductor memory device.

2. Description of the Related Art

As non-volatile semiconductor memory devices, there are known floatinggate (FG)-type memory devices in which a charge storage means (floatinggate) for storing charges is two-dimensionally continued, and MONOS-typememory devices and MNOS-type memory devices in which a charge storagemeans (e.g., carrier trap) is two-dimensionally discrete.

In the MONOS-type memory devices, on a semiconductor substrate where achannel is formed, an oxide nitride oxide (ONO) film and a gateelectrode are stacked on one another, and, in the substrate surfaceregions on both sides of the resultant stacked layer pattern,source-drain regions each having the opposite conductivity to thechannel are formed.

Writing is conducted by injecting charges from the substrate into aninsulating film having charge storage ability. On the other hand,erasing is conducted by taking out the stored charges to the substrateor injecting into the insulating film charges having the oppositepolarity to the stored charges.

In the above-mentioned conventional MONOS-type memory devices, a channelis formed on the surface of a flat single crystal silicon substrate.

Further, in recent years, with respect to the MONOS-type memory devicehaving a channel in the semiconductor substrate and having siliconnitride (SiN_(x)) as a charge storage layer, a semiconductor memorydevice has been reported in which electrons are locally written in asource end or a drain end using hot electron injection to make itpossible to store charges independently, enabling recording of 2 bitsper memory device (see Boaz Eitan, et al., Extended Abstracts of the1999 International Conference on Solid State Device and Materials,Tokyo, 1999, pp. 522).

However, when a channel is formed on the surface of a flat singlecrystal silicon substrate, for improving the degree of integration ofthe data recording density, the size per unit memory device in thesubstrate must be scaled down.

Therefore, for achieving the scaled-down semiconductor memory device,the length of the channel (channel length) between the source region andthe drain region in the semiconductor memory device must be shortened.However, the shortening of the gate length causes a so-called shortchannel effect, and typically, when the gate length is 0.1 μm orshorter, the transistor properties of the semiconductor memory devicedisadvantageously become poor.

In addition, in the above-mentioned semiconductor memory device in whicha channel is formed in the semiconductor substrate and electrons arelocally written in the source end or the drain end in the discretecharge storage layer using hot electron injection to enable recording of2 bits per unit memory device, when the channel length is shortened, thecharge storage regions of the source end and the drain end in whichelectrons are locally written overlap, so that the two different regionsthat electrons are separately written cannot be distinguished from eachother, making it impossible to perform the operation of recording of 2bits per unit memory device.

SUMMARY OF THE INVENTION

Therefore, in view of the above-mentioned conventional problem, thepresent invention provides a non-volatile semiconductor memory devicewhich suffers almost no deterioration in the properties even when thesize of the semiconductor memory device in the semiconductor substrateis scaled down, as compared to the semiconductor memory device having achannel in a flat semiconductor substrate, and a process for fabricatingthe non-volatile semiconductor memory device.

Further, the present invention also provides a non-volatilesemiconductor memory device which can perform the operation of recordingof 2 bits per unit memory device even when the size of the semiconductormemory device in the semiconductor substrate is scaled down, and aprocess for fabricating the non-volatile semiconductor memory device.

According to the present invention, there is provided a non-volatilesemiconductor memory device which comprises: a first conductivesemiconductor having a plurality of steps on a surface thereof; a secondconductive semiconductor region formed on an upper portion and a bottomportion of each of the steps and being separated in a directionperpendicular to a main surface of the first conductive semiconductor tofunction as a source or a drain; a gate dielectric film containingtherein a charge storage means which is spatially discrete and beingformed on the first conductive semiconductor so as to coat at least asidewall of each of the steps; and a gate electrode formed on the gatedielectric film.

Preferably, a plurality of memory transistors each having the secondconductive semiconductor region which functions as a source or drainregion, the gate dielectric film, and the gate electrode are arranged ina matrix form having rows and columns, wherein the steps are formed toextend in a column direction at a predetermined interval in the rowdirection, wherein the second conductive semiconductor region formed onthe bottom portion of each of the steps and the second conductivesemiconductor region formed on the upper portion of each of the stepsare respectively disposed in and shared by two adjacent one of thememory transistors in the row direction, wherein a plurality of the gateelectrodes are arranged so as to extend in the row direction and areindividually disposed between the memory transistors in the rowdirection and separated at a predetermined interval in the columndirection.

The gate dielectric film may comprise a lower dielectric film formed onthe first conductive semiconductor, and a charge storage film formed onthe lower dielectric film, wherein the charge storage film is comprisedmainly of the charge storage means.

The lower dielectric film may comprise, for example, a single filmselected from or a laminated film comprised of two or more filmsselected from the group consisting of a silicon dioxide film, a siliconoxide nitride film which has no trap or does not have traps in an amountenough to change the threshold voltage of a transistor, a film comprisedof an oxide of tantalum, titanium, zirconium, hafnium, lanthanum, oraluminum, and a film comprised of a silicate of tantalum, titanium,zirconium, hafnium, or lanthanum.

The charge storage film may comprise, for example, a single filmselected from or a laminated film comprised of two or more filmsselected from the group consisting of a silicon nitride film, a siliconoxide nitride film, a film comprised of an oxide of tantalum, titanium,zirconium, hafnium, lanthanum, or aluminum, and a film comprised of asilicate of tantalum, titanium, zirconium, hafnium, or lanthanum.

For example, the gate dielectric film may contain therein, as the chargestorage means, a plurality of small particle-size conductors which areinsulated from one another.

For example, the gate dielectric film may comprise an upper dielectricfilm formed on the charge storage film.

The upper dielectric film may comprise, for example, a single filmselected from or a laminated film comprised of two or more filmsselected from the group consisting of a silicon dioxide film, a siliconoxide nitride film which has no trap or does not have traps in an amountenough to change the threshold voltage of the transistor, a filmcomprised of an oxide of tantalum, titanium, zirconium, hafnium,lanthanum, or aluminum, and a film comprised of a silicate of tantalum,titanium, zirconium, hafnium, or lanthanum.

In the non-volatile semiconductor memory device of the presentinvention, the second conductive semiconductor region which function asa source or a drain is formed on the upper portion and the bottomportion of each of the steps in the first conductive semiconductor, andthe channel is formed on the sidewall between the source and the drain.Therefore, the channel length does not affect the size of the memorytransistor in the first conductive semiconductor.

Further, the height in a direction perpendicular to the main surface(height direction) of the first conductive semiconductor need not bereduced particularly. Therefore, the degree of integration of the memorytransistor can be improved without shortening the channel length of thememory transistor.

Further, according to the present invention, there is provided a processfor fabricating the non-volatile semiconductor memory device of thepresent invention, the process comprising the steps of: forming aplurality of steps on a main surface of a first conductivesemiconductor; forming a gate dielectric film on the first conductivesemiconductor so as to coat at least a sidewall of each of the steps,wherein the gate dielectric film contains therein charge storage meanswhich is spatially discrete; introducing a second conductive impurityinto the first conductive semiconductor having the steps to form, on anupper portion and a bottom portion of each of the steps, a secondconductive semiconductor region which functions as a source or a drain;and depositing a conductive film on the gate dielectric film andprocessing the resultant conductive film to form a gate electrode.

In the above-mentioned process, after the step of forming the pluralityof steps on the main surface of the first conductive semiconductor andbefore forming a gate dielectric film, the second conductivesemiconductor region may be formed.

In the process for fabricating the non-volatile semiconductor memorydevice of the present invention, simply by adding the step of formingthe plurality of steps in the semiconductor substrate, a non-volatilesemiconductor memory device having an improved degree of integration canbe produced.

Further, in the step of forming the steps in the main surface of thefirst conductive semiconductor, when, for example, an etching processhaving strong anisotropy is employed for improving the verticality ofthe steps, the sidewall of each of the steps is likely to suffer atleast a small damage. In such a case, the gate dielectric film presentnear the sidewall of each of the steps, which suffers damage, can be adielectric film having a number of defects. However, since the chargestorage means is spatially discrete, merely the charges stored in thecharge storage means near the defects leak.

The non-volatile semiconductor memory device of the present inventionsuffers almost no deterioration in the properties and can perform theoperation of recording of 2 bits per unit memory device even when thesize of the semiconductor memory device in the first conductivesemiconductor is scaled down, as compared to the semiconductor memorydevice having a channel in the first conductive semiconductor having aflat surface.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the presentinvention will become more apparent from the following description ofthe presently preferred exemplary embodiments of the invention taken inconjunction with the accompanying drawings, in which:

FIG. 1 is a diagrammatic plan view of a memory cell array according to afirst embodiment of the present invention;

FIG. 2 is a diagrammatic view showing a region in the plan view of FIG.1, into which an impurity is introduced;

FIG. 3A is a diagrammatic cross-sectional view taken along a lineIII-III in FIG. 1, and FIG. 3B is a diagrammatic cross-sectional viewtaken along a line III′-III′ in FIG. 1;

FIG. 4 is an explanatory enlarged diagrammatic cross-sectional viewillustrating a detailed structure of a gate dielectric film;

FIG. 5 is an equivalent circuit diagram corresponding to thecross-sectional view of a memory cell array shown in FIG. 4;

FIGS. 6A and 6B are diagrammatic cross-sectional views illustratingsteps in a process for fabricating a non-volatile semiconductor memorydevice according to the first embodiment, and FIG. 6A shows up to a stepof forming a trench portion in the semiconductor substrate, and FIG. 6Bshows up to a step of forming a gate dielectric film;

FIGS. 7A and 7B are diagrammatic cross-sectional views illustrating thesubsequent steps to the step shown in FIG. 6B, and FIG. 7A shows up to astep of forming a source-drain region, and FIG. 7B shows up to a step offorming a gate electrode; and

FIG. 8 is a diagrammatic cross-sectional view of a memory transistoraccording to the second embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinbelow, preferred embodiments of the present invention will bedescribed in detail with reference to the accompanying drawings, takingas an example a non-volatile semiconductor memory device having ann-channel MONOS-type memory transistor. Substantially the sameexplanation as that described below can be made on a p-channel typememory transistor except that the conductivity of the impurity in thememory transistor and the polarity of the carrier and in the conditionsfor voltage application are individually reversed.

First Embodiment

FIG. 1 is a diagrammatic plan view of a memory cell array according tothe present embodiment. As shown in FIG. 1, trenches R are formed in asemiconductor substrate (including an SOI layer) in a stripe form at apredetermined interval, and word lines WL are formed in a stripe form inthe direction perpendicular to the trenches R.

FIG. 2 is a diagrammatic view showing an impurity region formed on thesemiconductor substrate shown in the plan view of FIG. 1. As shown in ashaded portion in FIG. 2 indicated by slant lines, an impurity region(source-drain region) 12 which functions as a source or a drain isformed, and the source-drain region 12 at the bottom portions of thetrenches R formed in the semiconductor substrate forms bit lines BL2,BL4, BL6. The source-drain region 12 on the semiconductor substrate, inwhich no trench R is formed, forms bit lines BL1, BL3, BL5, BL7.

Thus, the bit lines BL comprised of the source-drain region 12 arearranged in parallel in one direction to form the bit lines BL1 to BL7.Although not shown, to the bit lines BL1 to BL7 is connected metalwiring (main source line and main bit line) through contacts.

The figure shows that the source-drain region 12 is referred to as andfunctions as a bit line BL, but the bit lines BL1 to BL7 function alsoas source lines depending on the direction of the voltage applied to thesource-drain region 12.

FIG. 3A is a diagrammatic cross-sectional view taken along a lineIII-III in FIG. 1, and FIG. 3B is a diagrammatic cross-sectional viewtaken along a line III′-III′ in FIG. 1.

As shown in FIGS. 3A and 3B, in a semiconductor substrate 11 comprisedof, for example, p-type silicon, the above-mentioned trenches R areformed at a predetermined interval to form a plurality of stepscomprising alternately formed convex portions (ridges) and concaveportions (grooves).

On a bottom surface of each concave portion (groove) and an uppersurface of each convex portion (ridge), two source-drain regions 12,into which an n-type impurity is introduced in a high concentration, areformed so as to be separated from each other in a directionperpendicular to the substrate.

A channel formation region is formed between an upper one and a lowerone of the source-drain regions 12, that is, formed along a sidewall ofeach of the steps formed in the semiconductor substrate 11 in thedirection perpendicular to the substrate surface.

A dielectric film (gate dielectric film) 13 having charge storageability is formed by, for example, stacking a plurality of insulatingfilms on one another so as to coat the semiconductor substrate 11 havingthe steps.

FIG. 4 is an explanatory enlarged diagrammatic cross-sectional viewillustrating the detailed structure of the gate dielectric film 13.

As shown in FIG. 4, the gate dielectric film 13 comprises a bottomdielectric film 13 a, a charge storage film 13 b which is responsiblemainly for charge storage, and a top dielectric film 13 c in ascendingorder from the lower layer.

The bottom dielectric film 13 a is comprised of a material having alarger band gap than that of the semiconductor substrate 11, forexample, a film which has no trap or does not have traps in an amountenough to change the threshold voltage of the transistor, such assilicon dioxide (SiO₂), silicon nitride (SiN_(x); x>0), or silicon oxidenitride (Si_(x)O_(y); x, y>0), and has a thickness of about 1 to 20 nm.

The charge storage film 13 b is comprised of a material having a smallerband gap than that of the bottom dielectric film 13 a and containing acharge trap as a charge storage means, for example, a film comprised ofsilicon nitride (SiN_(x); x>0) or silicon oxide nitride (si_(x)O_(y); x,y>0), and has a thickness of about 1 to 20 nm.

The top dielectric film 13 c is comprised of a film which has no trap ordoes not have traps in an amount enough to change the threshold voltageof the transistor, for example, silicon dioxide (SiO₂), silicon nitride(SiN_(x); x>0), or silicon oxide nitride (Si_(x)O_(y); x, y>0), and hasa thickness of about 3 to 20 nm for effectively inhibiting injection ofholes from the gate electrode 14 to prevent the lowering of theendurance for data.

On the gate dielectric film 13, the gate electrode 14 is formed. Thegate electrode 14 is comprised of, for example, polycrystalline siliconor amorphous silicon to which an impurity is added, and constitutes theword line WL.

FIG. 5 is an equivalent circuit diagram corresponding to thecross-sectional view of the memory cell array shown in FIG. 4.

As shown in FIG. 5, one convex portion and two bottom portions of theconcave portions on both sides of the convex portion shown in FIG. 4form two memory cell transistors.

Specifically, in the memory transistors shown in FIG. 5, thesource-drain regions 12 are formed on the upper surface of the convexportion and the bottom portions of the concave portions, and channels CHare formed on the sidewalls of the steps, that is, portions between theupper surfaces of the convex portions and the bottom portions of theconcave portions in the semiconductor substrate 11. Therefore, thechannels CH are formed on both sides of one convex portion, thus formingtwo memory transistors. Each bit line BL is connected to the adjacentmemory transistors.

Next, a process for fabricating the memory cell shown in FIG. 1 will bedescribed with reference to FIGS. 6A to 7B.

FIGS. 6A to 7B correspond to the cross-sectional structure shown in FIG.3A.

First, a p-well is formed in a silicon wafer provided by ionimplantation of B⁺ or BF⁺ if desired. On the surface of the thusprepared semiconductor substrate 11 on which a memory transistor isformed, a not shown resist having a pattern for forming the trenches Rshown in FIG. 1 is formed by a photolithography technique, and subjectedto reactive ion etching (RIE) having anisotropy using the resist as amask to form the trenches R in a stripe form.

Alternatively, a dielectric film may be formed on the region of thesemiconductor substrate in which the trenches R are not formed, andsubjected to etching using the dielectric film as a mask to form thetrenches R in a stripe form.

Next, the not shown resist is removed, and a gate dielectric film 13 isthen formed on the semiconductor substrate 11 in which the trenches Rare formed in a stripe form.

First, as the bottom dielectric 13 a shown in FIG. 4, a film comprisedof, for example, silicon dioxide (SiO₂), silicon nitride (SiN_(x); x>0),or silicon oxide nitride (SiO_(x)N_(y); x, y>0) is deposited so as tohave a thickness of about 1 to 20 nm. Among the above films, the silicondioxide film is formed by, for example, a thermal oxidation process.

On the other hand, the silicon nitride film is formed by a chemicalvapor deposition (CVD) process using as raw materials, for example,trichlorosilane (SiHCl₃) and ammonia (NH₃), or silicon tetrachloride(SiCl₄) and ammonia (NH₃). Alternatively, the silicon nitride film isformed by a jet vapor deposition (JVD) process (see M. Khara et al.,“Highly Robust Ultra-Thin Gate Dielectric for Giga Scale Technology”,Symp. VLSI Technology Digest, Honolulu, HI, June 1998), or a rapidthermal chemical vapor deposition (RTCVD) process (see S. C. Song etal., “Ultra Thin CVD Si₃H₄ Gate Dielectric for Deep-Sub-Micron CMOSDevices”, IEDM Tech, Digest. San Francisco, Calif., December 1998). Theraw material gases used are the same as those used in a CVD process.Further alternatively, the silicon nitride film is formed by nitridingusing N₂ radical or atomic nitrogen radical.

The silicon oxide nitride film is formed by subjecting a thermal oxidefilm to nitriding using nitrogen (N₂), dinitrogen oxide (N₂O), orammonia (NH₃), or formed by a CVD process using, as raw material gases,a combination of dichlorosilane (SiH₂Cl₂), dinitrogen oxide (N₂O), andammonia (NH₃), a combination of trichlorosilane (SiHCl₃), dinitrogenoxide (N₂O), and ammonia (NH₃), or a combination of silicontetrachloride (SiCl₄), dinitrogen oxide (N₂O), and ammonia (NH₃).

Then, on the bottom dielectric film 13 a, a film comprised of, forexample, silicon nitride (SiN_(x); x>0) or silicon oxide nitride(SiO_(x)N_(y); x, y>0) is deposited to be the charge storage film 13 bcontaining a charge trap shown in FIG. 4 so as to have a thickness ofabout 1 to 20 nm. Among the above films, the silicon nitride film isformed by a CVD process using as raw materials, for example,dichlorosilane (SiH₂Cl₂) and ammonia (NH₃), trichlorosilane (SiHCl₃) andammonia (NH₃), or silicon tetrachloride (SiCl₄) and ammonia (NH₃).

On the other hand, the silicon oxide nitride film is formed by a CVDprocess using as raw material gases, for example, a combination ofdichlorosilane (SiH₂Cl₂), dinitrogen oxide (N₂O), and ammonia (NH₃), acombination of trichlorosilane (SiHCl₃), dinitrogen oxide (N₂O), andammonia (NH₃), or a combination of silicon tetrachloride (SiCl₄),dinitrogen oxide (N₂O), and ammonia (NH₃).

Then, on the charge storage film 13 b, a film comprised of silicondioxide (SiO₂), silicon nitride (SiN_(x); x>0), or silicon oxide nitride(SiO_(x)N_(y); x, y>0) is deposited to be the top dielectric film 13 cshown in FIG. 4 so as to have a thickness of about 1 to 20 nm. Among theabove films, the silicon dioxide film is formed by a CVD process usingas raw materials, for example, dichlorosilane (SiH₂Cl₂) and dinitrogenoxide (N₂O), trichlorosilane (SiHCl₃) and dinitrogen oxide (N₂O), orsilicon tetrachloride (SiCl₄) and dinitrogen oxide (N₂O).

On the other hand, the silicon nitride film is formed by a CVD process,a JVD process, or an RTCVD process using as raw materials, for example,dichlorosilane (SiH₂Cl₂) and ammonia (NH₃), trichlorosilane (SiHCl₃) andammonia (NH₃), or silicon tetrachloride (SiCl₄) and ammonia (NH₃).

The silicon oxide nitride film is formed by a CVD process using as rawmaterial gases, for example, a combination of dichlorosilane (SiH₂Cl₂),dinitrogen oxide (N₂O), and ammonia (NH₃); a combination oftrichlorosilane (SiHCl₃), dinitrogen oxide (N₂O), and ammonia (NH₃); ora combination of silicon tetrachloride (SiCl₄), dinitrogen oxide (N₂O),and ammonia (NH₃).

Thus, the gate dielectric film 13 shown in FIG. 6B is formed.

Then, as shown in FIG. 7A, for example, an n-type impurity, such as As⁺or P⁺, is subjected to ion implantation in a direction substantiallyperpendicular to the substrate to form the source-drain regions 12 onthe upper surface of the convex portion and the bottom surfaces of theconcave portions in the semiconductor substrate 11. The ion implantationfor forming the source-drain regions 12 may be conducted before the stepof forming the gate dielectric film 13.

Next, as shown in FIG. 7B, polycrystalline silicon or amorphous siliconto which an impurity is added is deposited and patterned into the stripeform as shown in FIG. 1 to form the gate electrode 14.

In the subsequent steps, if desired, formation of an interlayerdielectric, formation of a contact, formation of an upper wiring layer,and the like are performed to form the non-volatile semiconductor memorydevice.

In the above-mentioned fabrication process, there is added a step ofpatterning for the semiconductor substrate 11, which step is notcontained in the process for fabricating a conventional cell having nosteps, that is, no ridges and no grooves, in the semiconductor substrate11. This processing step is short, as compared to the whole fabricationprocess for non-volatile semiconductor memory device, and hence does notcause an increase in cost. The cell has an extremely simple structureand has an advantage in that it can be easily produced.

Next, a first example of bias conditions setting for the above-mentionedmemory transistor is explained below.

Specifically, with respect to the memory transistor M21 shown in FIG. 4,explanation is made on the methods of writing, erasing, and reading 1bit data.

In the data writing, taking the potential of the semiconductor substrate11 as a basic potential, the source-drain regions 12 are kept 0 V, and apositive voltage, for example, 10 V is applied to the gate electrode 14.In this instant, electrons are stored in the channel formation region CHto form an inversion layer, and part of the electrons in the inversionlayer pass through the bottom dielectric film 13 a due to a tunneleffect, and are then captured mainly by the charge trap formed in thecharge storage film 13 b.

In the data reading, taking the potential of the semiconductor substrate11 as a basic potential, 0 V is applied to one of the source-drainregions 12, for example, 1.5 V is applied to the other, and a voltage insuch a range that the number of the electrons captured in the chargestorage film 13 b is not changed, for example, 2.5 V is applied to thegate electrode 14.

Under the above-mentioned bias conditions, the conductivity of thechannel remarkably varies depending on the amount of the electronscaptured in the charge storage film 13 b.

Specifically, when a satisfactory amount of electrons are injected intothe charge storage film 13 b, the electrons stored relatively increasesthe potential of the channel and reduces the electron density of thechannel, as compared to a case where a satisfactory amount of electronsare not injected into the charge storage film 13 b. Therefore, in such acase, the conductivity between the source and the drain is small. On theother hand, when a satisfactory amount of electrons are not injectedinto the charge storage film 13 b, the potential of the channel isrelatively low, so that the conductivity between the source and thedrain is large.

The difference in the conductivity of the channel is effectivelyconverted to the change in the current amount in the channel or thechange in the drain voltage. The change in the current amount in thechannel or the change in the drain voltage is amplified by a detectioncircuit, for example, a sense amplifier to be read out as memory data.

In the first example of bias conditions setting, the data writing isconducted on the entire surface of the channel. Therefore, even when thedirections of the voltages applied to the source and drain are reversed,data reading is possible.

In the data erasing, taking the potential of the semiconductor substrate11 as a basic potential, 0 V is applied to both the two source-drainregions 12, and a negative voltage, for example, −10 V is applied to thegate electrode 14.

In this instance, the electrons stored in the charge storage film 13 btunnel the bottom dielectric film 13 a and are forcibly taken out to thechannel formation region CH. As a result, the memory transistor goesback to be in a state before writing (erased state) such that the amountof the electrons captured in the charge storage film 13 b is lowsatisfactorily.

Next, a second example of bias conditions setting for the memorytransistor according to the first embodiment is explained below.

In the data writing, taking the potential of the semiconductor substrate11 as a basic potential, 0 V is applied to one of the two source-drainregions 12, 5 V is applied to the other, and a positive voltage, forexample, 10 V is applied to the gate electrode 14.

In this instance, electrons are stored in the channel formation regionCH to form an inversion layer, and the electrons supplied to theinversion layer from the source are accelerated by the electric fieldbetween the source and the drain to obtain a higher kinetic energy atthe drain end portion, thus forming hot electrons having an energy at alevel which exceeds the energy barrier of the bottom dielectric film 13a. Part of the hot electrons are captured in a certain probability bythe trap formed in the portion of the charge storage film 13 b on thedrain side.

The data reading is conducted in substantially the same manner as in thefirst example of bias conditions setting. However, in the second exampleof bias conditions setting, electrons are stored on the drain side towhich 5 V is applied in the data writing. Therefore, in the datareading, a voltage must be applied to between the source and the drainso that the charge storage side becomes a source.

The data erasing is conducted in substantially the same manner as in thefirst example of bias conditions setting employing FN (Fowler-Nordheim)tunneling or band-to-band tunneling. In the latter, taking the potentialof the semiconductor substrate 11 as a basic potential, 5 V is appliedto one of or both the two source-drain regions 12, and the source-drainregion 12 to which 5 V is not applied is kept 0 V, and −5 V is appliedto the gate electrode 14.

In this instance, the surface of the source-drain region 12 to which 5 Vis applied undergoes depletion, so that a high electric field is made onthe resultant depletion layer, thus causing a band-to-band tunnelcurrent. A hole caused by the band-to-band tunnel current is acceleratedby the electric field to obtain a higher energy. The hole having ahigher energy is pulled by the gate voltage and injected into the chargetrap in the charge storage film 13 b.

As a result, the charge of the electrons stored in the charge storagefilm 13 b is negated by the hole injected thereinto, so that the memorytransistor goes back to be in an erased state, i.e., a state such thatthe threshold voltage is low.

Next, a third example of bias conditions setting for the memorytransistor according to the first embodiment is explained below. Thebias conditions setting is basically the same as the second example ofbias conditions setting, but, in the third example of bias conditionssetting, 2 bits data is recorded per memory transistor.

In a first data writing, taking the potential of the semiconductorsubstrate 11 as a basic potential, 0 V is applied to one of the twosource-drain regions 12, 5 V is applied to the other, and a positivevoltage, for example, 10 V is applied to the gate electrode 14.

In this instance, electrons are stored in the channel formation regionCH to form an inversion layer, and the electrons supplied to theinversion layer from the source are accelerated by the electric fieldbetween the source and the drain to obtain a higher kinetic energy atthe drain end portion, thus forming hot electrons having an energy at alevel which exceeds the energy barrier of the bottom dielectric film 13a. Part of the hot electrons are captured in a certain probability bythe trap formed in the portion of the charge storage film 13 b on thedrain side.

Thus, as first data, electrons are captured on a region present mainlyat one end portion of the charge storage film 13 b.

In a second data writing, the values of the voltages applied to the twosource-drain regions 12 in the first data writing are reversed.Specifically, 0 V is applied to one of the two source-drain regions 12,and 5 V is applied to the other.

In this instance, the electrons supplied from the one source-drainregion 12 to which 0 V is applied become hot electrons in the othersource-drain region 12 to which 5 V is applied, and then injected into apart of the charge storage film 13 b on one side. Thus, as second data,electrons are captured in one end portion of the charge storage film 13b independently of the first data. The amount of the electrons injectedand the gate length (sidewall height) of the memory transistor aredetermined so that two 2 bits data injected in the third example of biasconditions setting do not overlap.

In reading of 2 bits data, a direction of the voltage applied to betweenthe source and the drain is determined so that the source-drain region.12 near the portion in which the data to be read is written functions asa source.

In a first data reading, 0 V is applied to one source-drain region 12near the first data, 1.5 V is applied to the other source-drain region12, and a voltage in such a range that the number of the electronscaptured in the charge storage film 13 b is not changed, for example,2.5 V is applied to the gate electrode 14.

Under the above-mentioned bias conditions, the conductivity of thechannel remarkably varies depending on the amount of the electronscaptured in the end portion of the charge storage film 13 b.Specifically, when a satisfactory amount of electrons are injected intothe end portion of the charge storage film 13 b on the source side, theelectrons stored relatively increases the potential of the portion ofthe channel on the source side and reduces the electron density of thechannel, as compared to a case where a satisfactory amount of electronsare not injected into the end portion of the charge storage film 13 b onthe source side. Therefore, in such a case, the conductivity between thesource and the drain is small.

In this case, the potential of the electrons near the drain is low dueto the drain voltage, irrespective of the amount of the electrons in theend portion of the charge storage film 13 b on the drain side. Further,the drain end portion is in a pinch-off state in the data reading.Therefore, the influence of the amount of the electrons in the endpotion of the charge storage film 13 b on the drain side on theconductivity of the channel is small.

That is, the threshold voltage of the transistor reflects the amount ofthe electrons captured on the source side in which the electric field islower. Therefore, under the above bias conditions, the first data isread by the detection circuit.

In a second data reading, 0 V is applied to one source-drain region 12near the second data, 1.5 V is applied to the other source-drain region12, and 2.5 V is applied to the gate electrode 14.

Under the above-mentioned bias conditions, the electric field in the onesource-drain region 12 is lower. Therefore, the second data is readaccording to the same principle as that in the first data reading.

Data erasing is conducted in substantially the same manner as in thefirst example of bias conditions setting employing FN tunneling orconducted in substantially the same manner as in the second example ofbias conditions setting employing band-to-band tunneling.

In the non-volatile semiconductor memory device according to the presentembodiment, by employing a structure having channel formation regions CHalong the sidewalls of the trenches R formed in the semiconductorsubstrate, the degree of integration of the data recording density canbe improved without shortening the gate length of the memory transistorto such a region that a short channel effect is caused.

In addition, the charges stored in the charge storage film 13 b arelocalized. Therefore, by locally writing electrons in the source end ordrain end, recording of 2 bits per memory transistor can be achieved. Inthis case, in the memory transistor structure in the present embodiment,for improving the degree of integration in the semiconductor substrate,the gate length of the memory transistor need not be shortened.Therefore, even when the degree of integration is improved, the chargestorage regions in which electrons are written separately in the sourceend and the drain end do not overlap, thus enabling the operation ofrecording of 2 bits per memory transistor.

Further, by employing a structure such that the channel formation regionCH is of vertical type and charges are stored in the charge storage film13 b having discrete charge storage means, such as a charge trap,differing from a case where the above structure is applied to thefloating gate-type, the following advantages can be obtained.

First, in the step of forming a trench R in the semiconductor substrate11, when, for example, an etching process having strong anisotropy isemployed for improving the verticality of the sidewall of the trench,the sidewall of the trench R is likely to suffer at least a smalldamage. In such a case, the bottom dielectric film 13 a to be formed onthe sidewall of the trench which suffers an etching damage can be a poorquality film. In other words, the bottom dielectric film 13 a having anumber of defects is formed. When the vertical-type structure is appliedto the floating gate-type, charges move freely in the layer of thefloating gate, and therefore all the charges stored in the floating gatepossibly leak into the substrate through the defects locally formed inthe bottom dielectric film 13 a. In contrast, when the charge trapformed on the bottom dielectric film 13 a is spatially discrete, merelythe charges stored in the charge trap near the defects leak, so thatleakage of the charges into the semiconductor substrate through thedefects can be suppressed, thus obtaining excellent properties includinga data storage property and reliability, as compared to those of thefloating gate-type.

Further, in the present embodiment, by utilizing the localization of thecharges stored, recording of 2 bits data per memory cell is possible,but, in the floating gate-type, the operation of recording of 2 bitsdata per memory cell is impossible.

Second Embodiment

The present embodiment illustrates a non-volatile semiconductor memorydevice using, as charge storage means for the memory transistor, anumber of conductors each having a particle diameter of, for example, 10nm or less (hereinafter, referred to as “small particle-sizeconductors”), which are insulated from one another and embedded in thegate dielectric film.

FIG. 8 is an enlarged diagrammatic cross-sectional view showing a devicestructure of the memory transistor using small particle-size conductorsas the charge storage means.

In the non-volatile memory transistor of the present embodiment, a gatedielectric film 23 comprises a bottom dielectric film 23 a, smallparticle-size conductors 23 b as charge storage means on the film 23 a,and a dielectric film 23 c which coats the small particle-sizeconductors 23 b.

Other constituents, namely, the semiconductor substrate 11, the channelformation region CH, the source-drain region 12, and the gate electrode14 are the same as those in the first embodiment.

The small particle-size conductors 23 b are comprised of a conductor,for example, fine amorphous (Si_(x)Ge_(1−x); 0≦x≦1) or polycrystalline(Si_(x)Ge_(1−x); 0≦x≦1). In addition, the small particle-size conductors23 b preferably have a size (diameter) of 10 nm or less, for example,about 4.0 nm, and the individual small particle-size conductors arespatially separated from one another at an interval of, for example,about 4 nm by the dielectric film 23 c.

In the present embodiment, the thickness of the bottom dielectric film23 a can be appropriately selected in the range of from 2.6 to 5.0 nmaccording to the use therefor. The thickness used here is about 4.0 nm.

A process for fabricating the memory transistor having theabove-mentioned construction is described below.

First, the bottom dielectric film 23 a is deposited in substantially thesame manner as in the first embodiment, and then, an aggregate of smallparticle-size conductors of Si_(x)Ge_(1−x) formed at the initial stageof the deposition of Si_(x)Ge_(1−x) using, for example, an LP-CVDprocess is formed on the bottom dielectric film 23 a. The smallparticle-size conductors of Si_(x)Ge_(1−x) are formed at a depositiontemperature of about 500 to 900° C. using silane (SiH₄) ordichlorosilane (DCS), germane (GeH₄), and hydrogen as raw materialgases.

The density and size of the small particle-size conductors can becontrolled by adjusting the partial pressure or the flow rate of each ofsilane or dichlorosilane and hydrogen. The higher the hydrogen partialpressure is, the higher the density of the nucleus for the smallparticle-size conductors becomes. Alternatively, SiO_(x) having anonstoichiometric composition is deposited at a deposition temperatureof about 500 to 800° C. using silane or dichlorosilane and dinitrogenoxide (N₂O) as raw material gases, and then annealed at a temperature ashigh as 900 to 1,100° C. to separate SiO₂ from the Si smallparticle-size conductors phase, thus forming an aggregate of Si smallparticle-size conductors embedded in SiO₂.

Then, the dielectric film 23 c is deposited in a thickness of, forexample, 7 nm by an LP-CVD process so that the small particle-sizeconductors 23 b are embedded in the dielectric film 23 c. In the LP-CVDprocess, when a mixed gas of dichlorosilane (DCS) and dinitrogen oxide(N₂O) is used as a raw material gas and the substrate temperature is,for example, 700° C., the small particle-size conductors 23 b areembedded in the dielectric film 23 c.

Then, a conductive film which functions as a word line is deposited,followed by a step of patterning the gate electrode 14 collectively,thus obtaining the memory transistor.

The thus formed small particle-size conductors 23 b function as carriertraps which are two-dimensionally discrete. The small particle-sizeconductors 23 b can individually store therein several electronsinjected. Each of the small particle-size conductors 23 b may be furtherdownsized so as to store therein a single electron.

In the non-volatile semiconductor memory device according to the presentembodiment, like in the first embodiment, the degree of integration ofthe data recording density can be improved.

In addition, like in the first embodiment, the charges stored in thesmall particle-size conductors 23 b are localized. Therefore, by locallywriting electrons in the source end and the drain end, recording of 2bits per memory transistor can be achieved. Further, like in the firstembodiment, even when defects are locally caused in the bottomdielectric film 23 a, the small particle-size conductors 23 b formed onthe bottom dielectric film 23 a as charge storage means are spatiallydiscrete, and therefore merely the charges stored in the smallparticle-size conductors 23 b near the defects leak, so that leakage ofthe charges into the semiconductor substrate through the defects can besuppressed, thus obtaining excellent properties including a data storageproperty and reliability, as compared to those of the floatinggate-type.

The non-volatile semiconductor memory device of the present invention isnot limited to those described in the above embodiments.

For example, the construction of the gate dielectric film 13 in thememory transistor is not limited to the three-layer dielectric film usedin the so-called MONOS-type memory device described in the aboveembodiments. The requirements for the gate dielectric film are that thegate dielectric film comprises a plurality of dielectric filmslaminated, and that charge storage means, such as a charge trap, bediscrete. Other constructions can be employed as long as they satisfythe two requirements.

For example, there can be employed a two-layer construction in theso-called MNOS-type memory device, which comprises a bottom dielectricfilm comprised of silicon dioxide or the like, and a film formed thereonhaving charge storage ability and being comprised of silicon nitride orthe like.

It is known that a dielectric film comprised of a metal oxide, such asaluminum oxide (Al₂O₃), tantalum oxide (Ta₂O₅), or zirconium oxide(ZrO₂), contains a number of traps, and therefore it can be used in aMONOS-type or MNOS-type memory device as a film having charge storageability. Further, as a material for the charge storage film 13 b, a filmcomprised of other metal oxide, for example, an oxide of titanium,hafnium, or lanthanum, or a film comprised of a silicate of tantalum,titanium, zirconium, hafnium, or lanthanum can be used.

When aluminum oxide (Al₂O₃) is selected as a material for the chargestorage film 13 b, a CVD process using as raw material gases, forexample, aluminum chloride (AlCl₃), carbon dioxide (CO₂), and hydrogen(H₂), or pyrolysis of aluminum alkoxide (e.g., Al(C₂H₅O)₃, Al(C₃H₇O)₃,or Al(C₄H₉O)₃) is used.

When tantalum oxide (Ta₂O₅) is selected as a material for the chargestorage film 13 b, a CVD process using as raw material gases, forexample, tantalum chloride (TaCl₅), carbon dioxide (CO₂), and hydrogen(H₂), or pyrolysis of TaCl₂(OC₂H₅)₂C₅H₇O₂ or Ta(OC₂H₅)₅ is used.

When zirconium oxide (ZrO_(x)) is selected as a material for the chargestorage film 13 b, a process of sputtering, for example, Zr in an oxygengas atmosphere is used.

Like the charge storage film 13 b, a material for each of the bottomdielectric film 13 a and the top dielectric film 13 c is not limited tothe above-mentioned silicon dioxide, silicon nitride, and silicon oxidenitride, but may be a material selected from, for example, aluminumoxide (Al₂O₃), tantalum oxide (Ta₂O₅), and zirconium oxide (ZrO₂). Theprocesses for forming these metal oxides are as mentioned above.

Further, each of the bottom dielectric film 13 a and the top dielectricfilm 13 c may be other metal oxide film, and a film comprised of anoxide of titanium, hafnium, or lanthanum, or a film comprised of asilicate of tantalum, titanium, zirconium, hafnium, or lanthanum can beused.

In addition, a variety of modifications can be made on the aboveembodiments as long as an effect aimed at by the present invention canbe obtained.

1. A non-volatile semiconductor memory device comprising: a firstconductive semiconductor having a plurality of steps on a surfacethereof; a second conductive semiconductor region formed on an upperportion and a bottom portion of each of said steps and being separatedin a direction perpendicular to a main surface of said first conductivesemiconductor to function as a source or a drain; a gate dielectric filmcontaining therein charge storage means which is spatially discrete andbeing formed on said first conductive semiconductor so as to coat atleast a sidewall and the upper portion of each of said steps, said gatedielectric film including a lower dielectric film formed on said firstconductive semiconductor, a charge storage film comprising zirconiumoxide and including said charge storage means formed on said lowerdielectric film, and an upper dielectric film formed on said chargestorage film; and a gate electrode formed on said gate dielectric film.2-10. (canceled)
 11. The non-volatile semiconductor memory deviceaccording to claim 1 wherein the charge storage film is formed by asputtering process.
 12. The non-volatile semiconductor memory deviceaccording to claim 11 wherein the sputtering process is performed in anoxygen gas atmosphere.
 13. The non-volatile semiconductor memory deviceaccording to claim 1 wherein said upper dielectric film comprises asingle film selected from or a laminated film comprised of two or morefilms selected from the group consisting of a silicon dioxide film, asilicon oxide nitride film which has no trap or does not have traps inan amount enough to change the threshold voltage of the transistor, afilm comprised of an oxide of tantalum, titanium, zirconium, hafnium,lanthanum, or aluminum, and a film comprised of a silicate of tantalum,titanium, zirconium, hafnium, or lanthanum.